homojunction
Sign in to savethumb|400px|right|A homojunction PN junction. The band at the interface is continuous. In forward bias mode, the [[depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59 V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves).]]
~1 min read
Article
4 sectionsContents
- See also
- Notes
- References
- External links
thumb|400px|right|A homojunction PN junction. The band at the interface is continuous. In forward bias mode, the [[depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59 V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves).]]
A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material; these materials have equal band gaps but typically have different doping. In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as silicon, this is called a p–n junction.