File:Gallium-arsenide-unit-cell-3D-balls.png · Wikimedia Commons · See Wikimedia Commons
gallium arsenide
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In the Vinony graph
Within Vinony's link graph, gallium arsenide is referenced by 553 other articles, and connects out to metalorganic vapour phase epitaxy, laser diode and list of semiconductor materials.
It is catalogued under topics including Arsenides, Chembox having GHS data and Chembox image size set.
Its subject is documented across 44 Wikipedia language editions.
Chemical data
- Formula
- AsGa
- Molecular weight
- 144.645 g/mol
- IUPAC name
- gallanylidynearsane
- SMILES
- [Ga]#[As]
- InChIKey
- JBRZTFJDHDCESZ-UHFFFAOYSA-N
- Polar surface area
- 0 Ų
- H-bond donors
- 0
- H-bond acceptors
- 0
- Formal charge
- 0
via PubChem
Wikidata facts
- Has part
- arsenic
- Mass
- 143.847
- Image
- Gallium arsenide crystal.jpg
- Has use
- semiconductor
Show 5 more facts
- Commons category
- Gallium arsenide
- chemical formula
- GaAs
- canonical SMILES
- [Ga]#[As]
- melting point
- 1240
- subject has role
- carcinogen
via Wikidata · CC0
~22 min read
Encyclopedic overview
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
Excerpted from Wikipedia’s “gallium arsenide” article, available under the CC BY-SA 4.0 licence.