KT315
Sign in to save{| class="infobox" style="text-align:left; width:280px;" |- |colspan="2" style="padding:1em 0" align="center"|200px |-style="background-color:#06c; color:#fff" !colspan="2" align="center"|КТ315 А...И |- !style="background-color:#def; width:50px"|Structure |style="background-color:#E7EBF5; width:228px"|n-p-n |- !style="background-color:#def"|Uce |style="background-color:#E7EBF5"|15–60 V |- !style="background-color:#def"|Ube |style="background-color:#E7EBF5"|6 V |- !style="background-color:#def"|Ic |style="background-color:#E7EBF5"|50–100 mA |- !style="background-color:#def"|Ib |style="backgroun
In the Vinony graph
Within Vinony's link graph, KT315 is referenced by 8 other articles, and connects out to bipolar junction transistor, Soviet Union and silicon.
Vinony files it under Bipolar transistors, Commercial transistors and Goods manufactured in the Soviet Union.
Its subject is documented across 5 Wikipedia language editions.
Wikidata facts
- Subclass of
- NPN transistor
- Country
- Soviet Union
- Material used
- silicon
- Image
- Kt315b.jpg
Show 2 more facts
- Commons category
- KT315
- inception
- 1967-00-00
via Wikidata · CC0
~3 min read
Encyclopedic overview
4 sectionsContents
- Application
- See also
- References
- External links
{| class="infobox" style="text-align:left; width:280px;" |- |colspan="2" style="padding:1em 0" align="center"|200px |-style="background-color:#06c; color:#fff" !colspan="2" align="center"|КТ315 А...И |- !style="background-color:#def; width:50px"|Structure |style="background-color:#E7EBF5; width:228px"|n-p-n |- !style="background-color:#def"|Uce |style="background-color:#E7EBF5"|15–60 V |- !style="background-color:#def"|Ube |style="background-color:#E7EBF5"|6 V |- !style="background-color:#def"|Ic |style="background-color:#E7EBF5"|50–100 mA |- !style="background-color:#def"|Ib |style="background-color:#E7EBF5"|50 mA |- !style="background-color:#def"|P |style="background-color:#E7EBF5"|100 mW |- !style="background-color:#def"|Pmax |style="background-color:#E7EBF5"|150 mW |- !style="background-color:#def"|Tmax, °C |style="background-color:#E7EBF5"|up to 100 °C |- !style="background-color:#def"|fT |style="background-color:#E7EBF5"|250 MHz |- !style="background-color:#def"h21e |style="background-color:#E7EBF5"|20–350 |} thumb|KT315b transistors|280px
The KT315 is a Soviet silicon NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications, enclosed in the plastic KT-13 package. It was widely used in Soviet electronic equipment. The KT361 is a complementary (PNP) for the KT315 transistor, so it was often paired with it in push-pull stages.
Excerpted from Wikipedia’s “KT315” article, available under the CC BY-SA 4.0 licence.